Modification of critical current density of MgB2 films irradiated with 200 MeV Ag ions

被引：34

作者：

Shinde, SR ^{[1
]}

Ogale, SB

Higgins, J

Choudhary, RJ

Kulkarni, VN

Venkatesan, T

Zheng, H

Ramesh, R

Pogrebnyakov, AV

Xu, SY

Li, Q

Xi, XX

Redwing, JM

Kanjilal, D

机构：

[1] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[4] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[5] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[6] Ctr Nucl Sci, New Delhi 110067, India

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 13期

关键词：

D O I：

10.1063/1.1687982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of 200 MeV Ag ion irradiation on the. temperature and field dependence of critical current density (J(c)) of high quality MgB2 thin films is studied. Substantial increase in J(C) is observed over a certain field range for the film irradiated at a dose of 10(12) ions/cm(2). Our analysis suggests that columnar defects are not formed under irradiation conditions used in these studies; which correspond to an electronic energy loss of about 16 keV/nm. Defects clusters are likely to be responsible for the. observed improvement in J(C). (C) 2004 American Institute of Physics.

引用

页码：2352 / 2354

页数：3

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