60-GHz Voltage-Controlled Oscillator and Frequency Divider in 0.25-μm SiGe BiCMOS Technology

被引：0
|
作者：
Lee, Jeong-Min [1 ]
Choi, Woo-Young [1 ]
Ruecker, Holger [2 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul, South Korea
[2] IHP, D-15326 Frankfurt, Germany
来源：
2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2012年
基金：
新加坡国家研究基金会;
关键词：
Colpitts voltage-controlled oscillator (VCO); SiGe BiCMOS; regeneartive frequency divider (FD); wide tuning;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an integrated 60-GHz voltage-controlled oscillator (VCO) and frequency divider (FD) chain in a 0.25-mu m SiGe BiCMOS technology. To achieve the wide tuning range, the VCO employs a differential Colpitts configuration and the FD is a regenerative type based on Gilbert-cell mixer and bandpass filter. The VCO-FD chain achieves the tuning range from 54 to 63 GHz and the phase noise of -96.5 dBc/Hz at 1-MHz offset. The power consumption is 46 mW with supply voltage of 3.3 V excluding output buffers.
引用
下载
收藏
页码：65 / 67
页数：3
相关论文
共 50 条
  • [21] 60GHz and 76GHz oscillators in 0.25μm SiGe:C BiCMOS
    Winkler, W
    Borngräber, J
    Heinemann, B
    Weger, P
    2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 454 - +
  • [22] A 60 GHz Frequency Divider with Quadrature Outputs in 130 nm SiGe BiCMOS Technology for Optical OFDM Systems
    Herzel, Frank
    Borngraeber, Johannes
    Ergintav, Arzu
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 69 - 72
  • [23] BICMOS TECHNOLOGY WITH 60-GHZ N-P-N BIPOLAR AND 0.25-MU-M CMOS
    WARNOCK, J
    SHAHIDI, GG
    DAVARI, B
    WU, B
    TAUR, Y
    WONG, C
    JENKINS, K
    CHEN, CL
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (11) : 578 - 580
  • [24] 7-Gb/s monolithic photoreceiver fabricated with 0.25-μm SiGe BiCMOS technology
    Youn, Jin-Sung
    Lee, Myung-Jae
    Park, Kang-Yeob
    Ruecker, Holger
    Choi, Woo-Young
    IEICE ELECTRONICS EXPRESS, 2010, 7 (09): : 659 - 665
  • [25] A Dual-Modulus Frequency Divider up to 128 GHz in SiGe BiCMOS Technology
    Ergintav, Arzu
    Herzel, Frank
    Korndoerfer, Falk
    Mausolf, Thomas
    Kissinger, Dietmar
    Fischer, Gunter
    2022 17TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2022), 2022, : 48 - 51
  • [26] A 70 GHz Static Dual-Modulus Frequency Divider in SiGe BiCMOS Technology
    Ergintav, Arzu
    Borngraeber, Johannes
    Heinemann, Bernd
    Ruecker, Holger
    Herzel, Frank
    Kissinger, Dietmar
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 65 - 68
  • [27] 30 GHz monolithic voltage-controlled oscillator with dual-modulus prescaler in SiGe bipolar technology
    Ritzberger, G
    Knapp, H
    Böck, J
    Aufinger, K
    PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 220 - 223
  • [28] A 98 GHz voltage controlled oscillator in SiGe bipolar technology
    Perndl, W
    Knapp, H
    Aufinger, K
    Meister, TF
    Simbürger, W
    Scholtz, AL
    PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2003, : 67 - 69
  • [29] A fully integrated SiGe bipolar 2.4 GHz Bluetooth voltage-controlled oscillator
    Klepser, BUH
    Kucera, J
    2000 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2000, : 61 - 64
  • [30] An advanced 0.25-μm BiCMOS process integration technology for multi-GHz communication LSIs
    Kinoshita, Y
    Suzuki, H
    Nakamura, S
    Fukaishi, M
    Tajima, A
    Suemura, Y
    Itani, T
    Miyamoto, H
    Fujii, H
    Yotsuyanagi, M
    Henmi, N
    Yamazaki, T
    PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1997, : 72 - 75
12345