LDMOS Technology for RF Power Amplifiers

被引：59

作者：

Theeuwen, S. J. C. H. ^{[1
]}

Qureshi, J. H. ^{[1
]}

机构：

[1] NXP Semicond, NL-6534 AE Nijmegen, Netherlands

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 06期

关键词：

Microwave amplifiers; MOSFET power amplifiers (PAs); power amplifiers; semiconductor device fabrication;

D O I：

10.1109/TMTT.2012.2193141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of the LDMOS transistor measured with a load-pull test setup, achieving class-AB drain efficiencies of 70% at 2 GHz for on-wafer and packaged devices. Furthermore, the results for several class-AB and Doherty amplifier implementations constructed with this technology are shown. As an illustration, a three-way Doherty application is demonstrated, which has a 7.5-dB back-off efficiency of 47% at 1.8 GHz with a peak power of 700 W and linearity numbers better than -65 dBc.

引用

页码：1755 / 1763

页数：9

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