High-resolution optical coherence tomography using broadband light source with strain-controlled InAs/GaAs quantum dots

被引:1
|
作者
Tsubaki, Ippei [1 ]
Harada, Yukihiro [1 ]
Kita, Takashi [1 ]
机构
[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
quantum dot; optical coherence tomography;
D O I
10.1002/pssc.201200291
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, there has been an increasing interest in broad-band light sources to develop a biomolecular imaging technique called optical coherence tomography (OCT). We fabricated superluminescent diodes (SLDs) using three kinds of quantum dot (QD) layers with different emission wavelength in the active region. The emission wavelength was controlled by reducing the strain in QDs by using In0.1Ga0.9As strain-reducing layer. The SLD device showed a broad electroluminescence spectrum with the center wavelength of 1104 nm and the spectral line-width of 122 nm at the injection of 40 mA, which corresponds to the theoretical axial resolution of 4.4 mu m. To estimate the actual resolution of the OCT system using fabricated SLD, we measured the interference signal in the Michelson interferometer. An axial resolution of 5.4 mu m, which is close to the theoretical limit, was obtained. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2473 / 2476
页数:4
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