Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

被引：28

作者：

Aoulaiche, Marc ^{[1
]}

Nicoletti, Talitha ^{[2
]}

Almeida, Luciano Mendes ^{[2
]}

Simoen, Eddy ^{[1
]}

Veloso, Anabela ^{[1
]}

Blomme, Pieter ^{[1
]}

Groeseneken, Guido ^{[1
]}

Jurczak, Malgorzata ^{[1
]}

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Univ Sao Paulo, BR-05508010 Sao Paulo, Brazil

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 08期

关键词：

Electric field; floating body; floating-body random access memory (RAM) (FBRAM); one-transistor RAM; recessed junctions; retention; silicon on insulator (SOI); underlap junctions; UTBOX; RECOMBINATION MODEL;

D O I：

10.1109/TED.2012.2200685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.

引用

页码：2167 / 2172

页数：6

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