LARGE-SCALE INTEGRATION OF 2D MATERIAL HETEROSTRUCTURES BY ADHESIVE BONDING

被引：0

作者：

Quellmalz, Arne ^{[1
]}

Wang, Xiaojing ^{[1
]}

Wagner, Stefan ^{[2
]}

Sawallich, Simon ^{[3
,4
]}

Lemme, Max C. ^{[2
,4
]}

Gylfason, Kristinn B. ^{[1
]}

Roxhed, Niclas ^{[1
]}

Stemme, Goran ^{[1
]}

Niklaus, Frank ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Dev Micro & Nanosyst, Stockholm, Sweden

[2] AMO GmbH, Adv Microelect Ctr Aachen AMICA, Aachen, Germany

[3] Protemics GmbH, Aachen, Germany

[4] Rhein Westfal TH Aachen, Chair Elect Devices, Aachen, Germany

来源：

2020 33RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2020) | 2020年

基金：

瑞典研究理事会; 欧洲研究理事会; 欧盟地平线“2020”;

关键词：

2D Material Heterostructures; Integration; Transfer; Wafer Bonding; Graphene; Hexagonal Boron Nitride;

D O I：

10.1109/mems46641.2020.9056203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the integration of graphene/hexagonal boron nitride (hBN) heterostructure devices on large-areas by adhesive wafer bonding, a method suitable for industrial mass-production. In this new approach, we stack graphene and hBN by two consecutive bond transfers whereby the graphene and its interface to hBN is not in contact with potentially contaminating polymers or adhesives at any time. To show the feasibility of our approach for back end of the line (BEOL) integration of two-dimensional (2D) material heterostructures on standard silicon substrates, we fabricated graphene/hBN devices with electrical bottom contacts using only established semiconductor manufacturing tools, processes and materials.

引用

页码：943 / 945

页数：3

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