Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

被引：50

作者：

Bell, C. ^{[1
]}

Bahramy, M. S. ^{[2
]}

Murakawa, H. ^{[2
]}

Checkelsky, J. G. ^{[2
]}

Arita, R. ^{[2
,3
]}

Kaneko, Y. ^{[4
]}

Onose, Y. ^{[3
,4
]}

Tokunaga, M. ^{[5
]}

Kohama, Y. ^{[5
]}

Nagaosa, N. ^{[2
,3
]}

Tokura, Y. ^{[2
,3
,4
]}

Hwang, H. Y. ^{[1
,2
,6
]}

机构：

[1] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[2] RIKEN ASI, CERG, Wako, Saitama 3510918, Japan

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[4] JST, ERATO, Multiferro Project, Tokyo 1138656, Japan

[5] Univ Tokyo, Inst Solid State Phys, Int MegaGauss Sci Lab, Kashiwa, Chiba 2778581, Japan

[6] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 08期

基金：

日本学术振兴会;

关键词：

D O I：

10.1103/PhysRevB.87.081109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109

引用

页数：5

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