Self-catalyzed MBE grown GaAs/GaAsxSb1-x core-shell nanowires in ZB and WZ crystal structures

被引：21

作者：

Ghalamestani, Sepideh Gorji ^{[1
]}

Munshi, A. Mazid ^{[2
]}

Dheeraj, Dasa L. ^{[2
]}

Fimland, Bjorn-Ove ^{[2
]}

Weman, Helge ^{[2
]}

Dick, Kimberly A. ^{[1
]}

机构：

[1] Lund Univ, SE-22100 Lund, Sweden

[2] Norwegian Univ Sci & Technol NTNU, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 40期

基金：

瑞典研究理事会;

关键词：

GAAS NANOWIRES;

D O I：

10.1088/0957-4484/24/40/405601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the growth of self-catalyzed GaAs/GaAsxSb1-x core-shell nanowires directly on Si(111) substrates by molecular beam epitaxy. The compositions of the GaAsxSb1-x shells are tuned in a wide range where the Sb-content is varied from 10 to similar to 70%, covering the miscibility gap. In addition, the GaAsxSb1-x shells are grown on both zinc blende (ZB) and wurtzite (WZ) crystal structures. Morphological and structural characterizations of the grown nanowires indicate successful transfer of the GaAs core crystal structure to the GaAsxSb1-x shells for both ZB and WZ nanowires, with slower shell growth rate on the WZ segments.

引用

页数：6

共 31 条

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