Current transport in carbon nanotube transistors

被引:0
|
作者
Pourfath, Mahdi [1 ]
Selberherr, Siegfried [1 ]
机构
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green's function formalism. Electron-phonon interaction parameters, such as electron-phonon coupling strength and phonon energy, strongly depend on the chirality and the diameter of the carbon nanotube. The steady-state and the dynamic response of carbon nanotube based transistors are studied for a wide range of electron-phonon interaction parameters.
引用
收藏
页码:351 / 356
页数:6
相关论文
共 50 条
  • [31] Suppression of Current Fluctuations in Carbon Nanotube Field-Effect Transistors by Applying Alternating Current
    Ohno, Yasuhide
    Maehashi, Kenzo
    Inoue, Koichi
    Matsumoto, Kazuhiko
    2008 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, 2008, : 67 - 70
  • [32] Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors
    Su, Sheng-Kai
    Sanchez-Soares, Alfonso
    Chen, Edward
    Kelly, Thomas
    Fagas, Giorgos
    Greer, James C.
    Pitner, Gregory
    Wong, H-S Philip
    Radu, Iuliana P.
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1367 - 1370
  • [33] Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors
    Le Louarn, A.
    Kapche, F.
    Bethoux, J.-M.
    Happy, H.
    Dambrine, G.
    Derycke, V.
    Chenevier, P.
    Izard, N.
    Goffman, M. F.
    Bourgoin, J.-P.
    Derycke, V.
    Chenevier, P.
    Izard, N.
    Goffman, M. F.
    Bourgoin, J.-P.
    APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [34] A COMPACT CURRENT-VOLTAGE MODEL FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
    Hosseinzadegan, Hadi
    Aghababa, Hossein
    Zangeneh, Mahmoud
    Afzali-Kusha, Ali
    Forouzandeh, Behjat
    CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, 2008, : 359 - 362
  • [35] Current Scaling in Aligned Carbon Nanotube Array Transistors With Local Bottom Gating
    Franklin, Aaron D.
    Wong, H. -S. Philip
    Lin, Albert
    Chen, Zhihong
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 644 - 646
  • [36] High-current nanotube transistors
    Seidel, R
    Graham, AP
    Unger, E
    Duesberg, GS
    Liebau, M
    Steinhoegl, W
    Kreupl, F
    Hoenlein, W
    NANO LETTERS, 2004, 4 (05) : 831 - 834
  • [37] Carbon nanotube electrodes in organic transistors
    Valitova, Irina
    Amato, Michele
    Mahvash, Farzaneh
    Cantele, Giovanni
    Maffucci, Antonio
    Santato, Clara
    Martel, Richard
    Cicoira, Fabio
    NANOSCALE, 2013, 5 (11) : 4638 - 4646
  • [38] Length scaling of carbon nanotube transistors
    Aaron D. Franklin
    Zhihong Chen
    Nature Nanotechnology, 2010, 5 : 858 - 862
  • [39] IBM develops carbon nanotube transistors
    Ball, Philip
    PHYSICS WORLD, 2012, 25 (12) : 12 - 12
  • [40] Carbon nanotube transistors for biosensing applications
    Gruner, G
    ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2006, 384 (02) : 322 - 335