Influence of mole ratio of Si: C on the magnetic property of undoped and vanadium carbide doped 3C-SiC

被引:3
|
作者
Wang, Hui [1 ,2 ]
Yan, Chengfeng [1 ]
Kong, Haikuan [1 ]
Chen, Jianjun [1 ]
Xin, Jun [1 ]
Shi, Erwei [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
FERROMAGNETISM;
D O I
10.1016/j.cplett.2012.12.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ferromagnetism (FM) of 3C-SiC powders have been studied by tuning the mole ratio of Si: C. The results of magnetic measurements show that with increasing Si: C, the saturation magnetization (M-s) of undoped 3C-SiC is hardly varied while the M-s of vanadium carbide (VC) doped 3C-SiC is reduced. The introduction of VC mainly leads to the decrease of divacancies (VSiVC) concentration which is the FM origin, and this effect is enhanced with increasing Si: C. Furthermore, the increase of carrier concentration hardly influences the FM of 3C-SiC at VC doping concentration of 0.1 wt.%. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:142 / 145
页数:4
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