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- [1] Effect of large C/Si ratio on Morphology and Magnetic Property of 3C-SiC 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
- [2] Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration MRS ADVANCES, 2016, 1 (54): : 3649 - 3654
- [5] Effect of Si/C flux ratio on the growth of 3C-SiC on Si (111) by SSMBE PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
- [6] Influence of the C/Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 31 - +
- [7] Growth of 3C-SiC on Si: Influence of Process Pressure SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 211 - +
- [8] The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 539 - 543
- [9] The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 535 - 538
- [10] Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 197 - 200