Controlled surface oxidation of HfSe2 via oxygen-plasma treatment

被引：12
|
作者：
Zhao, Liyuan [1 ]
Wei, Yuehua [2 ]
Zhang, Renyan [2 ]
Peng, Yuanxi [1 ]
机构：
[1] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Coll Adv Interdisciplinary Res, Changsha 410073, Hunan, Peoples R China
来源：
MATERIALS LETTERS | 2019年 / 243卷 / 96-99期
关键词：
Oxidation; Interfaces; Oxygen-plasma treatment; HfSe2; HfOx; FILMS;
D O I：
10.1016/j.matlet.2019.02.024
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Growing uniform surface oxides is vital for fabricating 2D materials based electronic and optoelectronic devices. However, the surface transition metal oxides (TMDs) of air-exposure transitional metal dichalcogenides (TMDs), such as HfOx on HfSe2, are island-type, with poor TMOs/TMDs interface quality. Here, we report a controlled surface oxidation of atomically thin HfSe2 flakes via oxygen-plasma treatment, where a dense atomically flat HfOx film is produced. This HfOx film is found to be a good surface passivation layer to prevent the inner part from further oxidation in air, which is also promising as a high-K dielectric in HfSe2-based devices. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码：96 / 99
页数：4
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