Silicon sensors for trackers at high-luminosity environment

被引:3
|
作者
Peltola, Timo [1 ]
机构
[1] Univ Helsinki, Helsinki Inst Phys, FI-00014 Helsinki, Finland
关键词
Radiation damage; Silicon particle detectors; Radiation hardness; Defect engineering; Detector simulations; HL-LHC; MICROSTRIP DETECTORS; TRANSIENT CURRENT; TECHNOLOGY; OXYGEN; 3D;
D O I
10.1016/j.nima.2015.03.031
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:74 / 79
页数:6
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