Electromagnetic modeling of micromachined GaN thin films for FBAR applications

被引：0
|
作者：
Neculoiu, D. [1 ]
Konstantinidis, G. [1 ]
Mutamba, K. [1 ]
Takacs, A. [1 ]
Vasilache, D. [1 ]
Sydlo, C. [1 ]
Kostopoulos, T. [1 ]
Stavrinidis, A. [1 ]
Müller, A. [1 ]
机构：
[1] IMT Bucharest, Bucharest 077190, Romania
来源：
CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE | 2005年 / 1-2卷
关键词：
electromagnetic modelling; FBAR; piezoelectric material parameter extraction;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a new electromagnetic modeling approach for FBAR structures that integrates the piezoelectric/acoustic effects into a commercial Zeland IE3D electromagnetic simulator. An analytic dispersion model describes the piezoelectric material frequency dependent effective permittivity. Several GaN based test structures were fabricated using bulk micromachining technologies. From microwave measurements the model parameters were extracted.
引用
收藏
页码：119 / 122
页数：4
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