Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

被引：0
|
作者：
Al Hajjar, Ahmad [1 ]
Nallatamby, Jean-Christophe [1 ]
Prigent, Michel [1 ]
Jacquet, Jean-Claude [2 ]
机构：
[1] Univ Limoges, XLIM C2S2, F-19100 Brive La Gaillarde, France
[2] III V Lab, F-91461 Marcoussis, France
来源：
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年
关键词：
LF Noise Measurement; Numerical simulation; Noise corner frequencies; InGaP/GaAs heterojunction; Traps; BIPOLAR-TRANSISTORS; INTERFACE; ELECTRON; CENTERS; DEVICES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300 degrees K to 375 degrees K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green's function, traps detected by temperature-dependent experimental observation is located at the heterointerface delta-InGaP/GaAs, responsible for the GR noise sources. The simulated results are in good agreement with experimental data.
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页码：5 / 8
页数：4
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