Thin Layer Ag-Sn Transient Liquid Phase Bonding using Magnetron Sputtering for Chip to Baseplate Bonding

被引:0
|
作者
Natzke, Philipp [1 ]
Grossner, Ulrike [1 ]
Janczak-Rusch, Jolanta [2 ]
Jeurgens, Lars [2 ]
机构
[1] ETH, Adv Power Semicond Lab, Phys Str 3, Zurich, Switzerland
[2] Swiss Fed Labs Mat Sci & Technol, Empa, Lab Joining Technol & Corros, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
关键词
packaging; die attach; TLP bonding; Ag-Sn;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The formation of a high temperature die attach based on transient liquid phase (TLP) bonding is demonstrated using the binary system Ag-Sn in a sputtered thin layer approach. The microstructure and shear strength are compared to a foil based approach and show the successful replacement of the Sn foil and thus a simplification of the stack assembly. The diffusion of the Ag-Sn system is investigated in a long-term experiment at room temperature as well as in short-term experiments in the temperature range of the tin melting point. The results show the bondability of long-term stored samples and the possibility for decreased layer thickness while still enabling formation of the liquid phase to create the bond. TLP joints with a tin thickness of 2 nm are manufactured successfully and show comparable microstructures to thick layer joints. This approach offers an improved manufactur ability of power modules.
引用
收藏
页码:165 / 170
页数:6
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