Feasibility overview of plasmonic devices for optoelectronics

被引：0
|
作者：
Lee, Byoungho [1 ]
Kim, Hwi [1 ]
Park, Junghyun [1 ]
Lee, Il-Min [1 ]
机构：
[1] Seoul Natl Univ, Natl Creat Res Ctr Act Plasmon Applicat Syst, Interuniv Semicond Res Ctr, Sch Elect Engn, Seoul 151744, South Korea
来源：
2008 JOINT CONFERENCE OF THE OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE AND THE AUSTRALIAN CONFERENCE ON OPTICAL FIBRE TECHNOLOGY, VOLS 1 AND 2 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an overview of recently proposed various plasmonic devices for optoelectronics, such as channel plasmon subwavelength components, nonlinear plasmon-based photonic transistor, optical memory by slowing and trapping surface plasmons, and active plasmonics.
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页码：365 / +
页数：2
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