DEEP REACTIVE ION ETCHING TECHNIQUE INVOLVING USE OF 3D SELF-HEATED CATHODE

被引：0

作者：

Han, Gang ^{[1
]}

Murata, Yuki ^{[1
]}

Ohkawa, Daiki ^{[1
]}

Sohgawa, Masayuki ^{[1
]}

Abe, Takashi ^{[1
]}

机构：

[1] Niigata Univ, Nishi Ku, 8050 Ikarashi 2 Nocho, Niigata, Japan

来源：

2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2017年

基金：

日本科学技术振兴机构;

关键词：

deep reactive ion etching; minor metals; SF6; plasma; TITANIUM; PLASMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a thermally assisted reactive-ion etching (TRIE) technique using a 3D self-heated stage as the etching stage in a conventional reactive-ion etcher was developed and applied to a large size wafer. The 3D stage was designed based on simulation results and its heating characteristics on application of RF power were evaluated. Results indicated that the temperature of the etching stage increased rapidly to 350 degrees C, but maintained a distribution of <= 4 degrees C. Its application to various minor metals (Ti, Ti 6Al-4V, Ta, Nb, and Mo) was investigated. The resultant etch rates substantially increased with the use of the 3D self-heated cathode in a conventional reactive-ion etcher.

引用

页码：1281 / 1284

页数：4

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