MOCVD of perovskites with metallic conductivity

Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO3, LaNiO3, La0.5Sr0.5CoO3 and (La, Pr)(0.7)(Sr, Ca)(0.3)MnO3). Structural and electrical properties of the epitaxial layers on the coherent substrates are dose to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO3/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R(1-x)A(x)MO(3) films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R(1-x)A(x)MnO(3) on the nature of R and A and film-substrate lattice mismatch was studied.