Operator ordering and boundary conditions for valence-band modeling: Application to [110] heterostructures

被引:20
|
作者
Stavrinou, PN [1 ]
vanDalen, R [1 ]
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 23期
关键词
D O I
10.1103/PhysRevB.55.15456
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A general method to derive the operator ordering and boundary conditions within the framework of the recently developed exact envelope-function theory is presented. An ordered form of the familar Luttinger-Kohn Hamiltonian is derived which can be regarded as the natural starting point for calculations involving heterostructures, such that transforming with an appropriate angular momentum basis, the derived ordering provides an unambiguous prescription for the boundary conditions across the interface. As an example, specific expressions are derived for structures with confinement along the [110] direction where the resulting boundary conditions are found to differ significantly from those currently used in the literature. The effect on the calculated in-plane dispersions is examined for two material systems, where it is found the greatest differences occur in systems with a large difference in Luttinger parameters. Typically, the results show that employing the traditional boundary conditions tends to exaggerate any negative curvature of the valence bands near the zone center.
引用
收藏
页码:15456 / 15459
页数:4
相关论文
共 50 条
  • [21] ANION-SPECIFIC SURFACE VALENCE-BAND STATES IN HETEROPOLAR SEMICONDUCTORS - THE CASE OF GAP(110) AND INP(110)
    SANCROTTI, M
    DUO, L
    CALLIARI, L
    MANGHI, F
    COSSO, R
    WEIGHTMAN, P
    PHYSICAL REVIEW B, 1992, 46 (20): : 13607 - 13610
  • [22] CHEMICAL-REACTIONS AT THE SI GAAS(110) AND SI INP(110) INTERFACES - EFFECTS ON VALENCE-BAND DISCONTINUITY MEASUREMENTS
    LIST, RS
    KENDELEWICZ, T
    WILLIAMS, MD
    MCCANTS, CE
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1543 - 1547
  • [23] THEORY OF VALENCE-BAND AUGER LINE-SHAPES - IDEAL SI(111), (100), AND (110)
    FEIBELMAN, PJ
    MCGUIRE, EJ
    PANDEY, KC
    PHYSICAL REVIEW B, 1977, 15 (04): : 2202 - 2216
  • [24] DIRECT DISPLAY OF THE VALENCE-BAND DISPERSION IN ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY - APPLICATION TO GASE
    LEVEQUE, G
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (06): : 859 - 861
  • [25] Effect of the degree of ordering of structural vacancies on the fine structure of the valence-band top in cubic boron nitride
    Ilyasov, VV
    Nikiforov, IY
    PHYSICS OF THE SOLID STATE, 1997, 39 (06) : 955 - 956
  • [26] Effect of the degree of ordering of structural vacancies on the fine structure of the valence-band top in cubic boron nitride
    V. V. Ilyasov
    I. Ya. Nikiforov
    Physics of the Solid State, 1997, 39 : 955 - 956
  • [28] Direct calculation of valence-band emission: Spin polarization of Auger electrons from a potassium (110) surface
    Yuan, JM
    Fritsche, L
    Noffke, J
    PHYSICAL REVIEW B, 1997, 56 (15): : 9942 - 9946
  • [29] EXPERIMENTAL-DETERMINATION OF THE VALENCE-BAND STRUCTURE OF MOLECULAR-BEAM-EPITAXY-GROWN CDTE(110)
    HOCHST, H
    NILES, DW
    HERNANDEZCALDERON, I
    PHYSICAL REVIEW B, 1989, 40 (12): : 8370 - 8377
  • [30] Valence-band energies of GaAs/AlGaAs and InGaAs/InP v-groove [110] quantum wires
    Lassen, B
    Voon, LCLY
    Melnik, R
    Willatzen, M
    NSTI NANOTECH 2004, VOL 3, TECHNICAL PROCEEDINGS, 2004, : 49 - 52