New MOSFET-Based Expander for High Frequency Ultrasound Systems

被引:4
|
作者
Choi, Hojong [1 ]
Kim, Mingon [1 ]
Shung, K. Kirk [1 ]
机构
[1] Univ So Calif, NIH Transducer Resource Ctr, Los Angeles, CA 90089 USA
关键词
Protection Devices; Expander; Power MOSFET; High Frequency Ultrasound Systems; Ultrasonic Transducers;
D O I
10.1109/ULTSYM.2012.0155
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Diode-based expanders (expanders with single-crossed diodes) are widely used for pulse-echo measurements and in imaging systems. The function of the diode-based expander is to obstruct the noise from the transmitted output signals of the pulser and block the returned signals from the ultrasonic transducers to the pulser. It may also degrade the performance of the transducer and electronic components on the imaging side of the system because of non-linearity and attenuation at higher voltages. A new type of expander using power MOSFETs for high frequency ultrasound systems is proposed and studied. Compared to diode-based expander, this device is shown to yield lower insertion loss and total harmonic distortion, and faster reverse recovery time.
引用
收藏
页码:623 / 626
页数:4
相关论文
共 50 条
  • [1] Novel power MOSFET-based expander for high frequency ultrasound systems
    Choi, Hojong
    Shung, K. Kirk
    [J]. ULTRASONICS, 2014, 54 (01) : 121 - 130
  • [2] Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
    Choi, Hojong
    Shung, K. Kirk
    [J]. BIOMEDICAL ENGINEERING ONLINE, 2014, 13
  • [3] Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers
    Hojong Choi
    K Kirk Shung
    [J]. BioMedical Engineering OnLine, 13
  • [4] MOSFET-Based Memristor for High-Frequency Signal Processing
    Ghosh, Mourina
    Singh, Ankur
    Borah, Shekhar S.
    Vista, John
    Ranjan, Ashish
    Kumar, Santosh
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (05) : 2248 - 2255
  • [5] High-efficiency MOSFET-based MMC for LVDC Distribution Systems
    Zhong, Y.
    Holliday, D.
    Finney, S. J.
    [J]. 2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2015, : 6691 - 6697
  • [6] High sensitivity MOSFET-based neutron dosimetry
    Fragopoulou, M.
    Konstantakos, V.
    Zamani, M.
    Siskos, S.
    Laopoulos, T.
    Sarrabayrouse, G.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 621 (1-3): : 611 - 614
  • [7] High-Efficiency MOSFET-Based MMC Design for LVDC Distribution Systems
    Zhong, Yanni
    Roscoe, Nina
    Holliday, Derrick
    Lim, Tee Chong
    Finney, Stephen J.
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2018, 54 (01) : 321 - 334
  • [8] Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems
    Jin, Xin
    Jiang, Chunsheng
    Song, Enming
    Fang, Hui
    Rogers, John A.
    Alam, Muhammad Ashraful
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3443 - 3451
  • [9] Power MOSFET-Diode-Based Limiter for High-Frequency Ultrasound Systems
    Choi, Hojong
    Kim, Min Gon
    Cummins, Thomas M.
    Hwang, Jae Youn
    Shung, K. Kirk
    [J]. ULTRASONIC IMAGING, 2014, 36 (04) : 317 - 330
  • [10] THE IMPACT OF MOSFET-BASED SENSORS
    BERGVELD, P
    [J]. SENSORS AND ACTUATORS, 1985, 8 (02): : 109 - 127