The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

被引：3

作者：

Wan Xiao-Jia ^{[1
]}

Wang Xiao-Liang ^{[1
,2
,3
]}

Xiao Hong-Ling ^{[1
]}

Wang Cui-Mei ^{[1
]}

Feng Chun ^{[1
]}

Deng Qing-Wen ^{[1
]}

Qu Shen-Qi ^{[1
]}

Zhang Jing-Wen ^{[3
]}

Hou Xun ^{[3
]}

Cai Shu-Jun ^{[4
]}

Feng Zhi-Hong ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China

[4] Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ALN; GAN; DISCONTINUITIES;

D O I：

10.1088/0256-307X/30/5/057101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 +/- 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of similar to 0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.

引用

页数：3

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