Solid-phase Epitaxy of Silicon Amorphized by Implantation of the Alkali Elements Rubidium and Cesium

被引：1
|
作者：
Maier, R. [1 ]
Haeublein, V. [2 ]
Ryssel, H. [1 ,2 ]
Voellm, H. [3 ]
Feili, D. [3 ]
Seidel, H. [3 ]
Frey, L. [1 ,2 ]
机构：
[1] Univ Erlangen Nurnberg, LEB, Cauerstr 6, D-91058 Erlangen, Germany
[2] Fraunhofer Inst Integrierte Syst & Bauelementetec, D-91058 Erlangen, Germany
[3] Univ Saarland, Lehrstuhl Mikromech, Mikrofluidik Mikroakt LMM, D-66123 Saarbrucken, Germany
来源：
ION IMPLANTATION TECHNOLOGY 2012 | 2012年 / 1496卷
关键词：
ion implantation; amorphous; solid-phase epitaxy; redistribution; alkali; rubidium; cesium; AMORPHOUS SI LAYERS; REGROWTH RATE;
D O I：
10.1063/1.4766542
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.
引用
收藏
页码：276 / 279
页数：4
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