Substrate-induced high-frequency noise in deep sub-micron MOSFETs for RF applications

被引：10

作者：

Kishore, SV ^{[1
]}

Chang, G ^{[1
]}

Asmanis, G ^{[1
]}

Hull, C ^{[1
]}

Stubbe, F ^{[1
]}

机构：

[1] SiliconWave, San Diego, CA USA

来源：

PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 1999年

关键词：

D O I：

10.1109/CICC.1999.777307

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present results from high-frequency noise measurements on NMOS devices fabricated in a 0.5-mu m epi-based CMOS process. These noise measurements at RF frequencies reveal the existence of substrate-induced high-frequency noise in transistors operating in the saturation regime. The substrate-induced noise is independent of the A new ac noise model for CMOS devices operating at RF measurements. Its implications are emphasized via the design of a low-noise amplifier (LNA) operating at 2 GHz. The minimum achievable noise-figure (NF) can be higher by as much as 0.6 dB due to this substrate-induced high-frequency noise.

引用

页码：365 / 368

页数：4

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