Pressure-induced metal-insulator transition of the mott insulator Ba2IrO4

被引：3

作者：

Orii, Daisuke ^{[1
]}

Sakata, Masafumi ^{[1
]}

Miyake, Atsushi ^{[1
]}

Shimizu, Katsuya ^{[1
]}

Okabe, Hirotaka ^{[2
]}

Isobe, Masaaki ^{[2
]}

Takayama-Muromachi, Eiji ^{[2
]}

Akimitsu, Jun ^{[3
]}

机构：

[1] Osaka Univ, KYOKUGEN, Osaka 5608531, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Aoyama Gakuin Univ, Shibuya, Kanagawa 2525258, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 03期

关键词：

Iridates; Ba2IrO4; Pressure; Mott insulator; Anderson localization; Superconductivity; SR2IRO4; SUPERCONDUCTIVITY; UNIVERSALITY; RESISTIVITY; CRYSTAL;

D O I：

10.3938/jkps.63.349

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba2IrO4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba2IrO4 shows a metal-insulator transition at around P (c) = 24 GPa, though it does not show superconductivity down to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventional Fermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagnetic quantum spin fluctuations. The critical exponent delta for the metal-insulator transition is about 1.6, indicating that Ba2IrO4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.

引用

页码：349 / 351

页数：3

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