Pressure-induced metal-insulator transition of the mott insulator Ba2IrO4

被引:3
|
作者
Orii, Daisuke [1 ]
Sakata, Masafumi [1 ]
Miyake, Atsushi [1 ]
Shimizu, Katsuya [1 ]
Okabe, Hirotaka [2 ]
Isobe, Masaaki [2 ]
Takayama-Muromachi, Eiji [2 ]
Akimitsu, Jun [3 ]
机构
[1] Osaka Univ, KYOKUGEN, Osaka 5608531, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[3] Aoyama Gakuin Univ, Shibuya, Kanagawa 2525258, Japan
关键词
Iridates; Ba2IrO4; Pressure; Mott insulator; Anderson localization; Superconductivity; SR2IRO4; SUPERCONDUCTIVITY; UNIVERSALITY; RESISTIVITY; CRYSTAL;
D O I
10.3938/jkps.63.349
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba2IrO4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba2IrO4 shows a metal-insulator transition at around P (c) = 24 GPa, though it does not show superconductivity down to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventional Fermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagnetic quantum spin fluctuations. The critical exponent delta for the metal-insulator transition is about 1.6, indicating that Ba2IrO4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.
引用
收藏
页码:349 / 351
页数:3
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