A low power trimming-free relaxation oscillator with process and temperature compensation

被引：0
|
作者：
Yao, Mengmeng [1 ]
Wang, Yao [1 ]
Wu, Zhaolei [2 ]
Liou, Juin Jei [1 ]
机构：
[1] Zhengzhou Univ, Sch Informat Engn, Zhengzhou, Peoples R China
[2] Naneng Microelect Co Ltd, Chengdu, Peoples R China
来源：
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年
基金：
中国国家自然科学基金;
关键词：
oscillator; current refrrence; high-precision; low-power;
D O I：
10.1109/isne.2019.8896495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low power trimming-free relaxation oscillator with process and temperature compensation is presented. It adopts a current reference based on transistors working in strong-inversion region and another subthreshold MOSFET current reference to generate the reference voltages for the comparator stage and the charging/discharging current for the oscillator core, respectively. The instability of the time constant RC induced by process and temperature variations are compensated by this scheme. The circuit is designed using TSMC 0.18 mu m standard CMOS process and simulated with Spectre. Simulations results show that the worst-case variation of the oscillation frequency is +/- 4.5% from -20 to 80 degrees C in live different process corners. The power for the proposed oscillator is only 253 nW at 27 degrees C.
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页数：3
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