Ultra low phase noise sapphire - SiGe HBT oscillator

被引：15
|
作者：
Llopis, O [1 ]
Cibiel, G
Kersale, Y
Regis, M
Chaubet, M
Giordano, V
机构：
[1] CNRS, LAAS, Toulouse, France
[2] CNRS, LPMO, Besancon, France
[3] SiGe Semicond, Ottawa, ON, Canada
[4] CNES, Toulouse, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 05期
关键词：
bipolar transistor; microwave oscillator; phase noise; sapphire resonator; SiGe;
D O I：
10.1109/7260.1000188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A state of the art C band oscillator is presented. It is based on a high Q WGM sapphire resonator and on a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator.
引用
收藏
页码：157 / 159
页数：3
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