Interfacial Studies of HfO2/CrSi2 thin films as High k Metal Gate Dielectric layer on SiC

High k dielectric metal oxide films have attracted much attention as promising candidates providing many advantages over SiO2. To increase the capacitance while reducing the tunneling current, various kinds of high dielectric materials have been investigated as possible alternatives to SiO2. The use of high -k/metal gate technology will provide cost, performance and power savings. Owing to handle high critical electric field, electron saturation velocity and thermal conductivity SiC has advantages over Si, quantitatively put together 186 times better than Si. In this work, we have studied the low leakage electrical properties of nano HfO2 thin films on SiC. The bandgap of HfO2 thin films was observed to be 5.8 eV. MIS structures (HfO2/CrSi2/SiC) with Ni as a top and bottom electrode were fabricated to study the leakage current properties. The devices exhibited leakage current density of 30 nA/cm2.