In situ ion beam analysis of chemical and plasma etching of Si

The possibility of carrying out in situ ion beam analysis of a gas-solid interface using RBS/Channeling techniques has been investigated using chemical and plasma etching of Si. A specially constructed thin Si window cell is used to initiate chemical etching of Si using Xe F-2. Analysis of etched Si surface using conventional, micro RBS/Channeling and computer simulated channeling spectra indicates a smooth damage free surface with fairly uniform etching. A moderate increase in etching rate and channeling chi(min) is observed in the presence of the analyzing beam. The results of chemical etching are compared with that due to Ar+ and Xe+ plasma induced etching of Si. In situ microbeam channeling analysis with CCM (Channeling Contrast Microscopy) of the plasma-etched surface indicates distinct differences in both etching rate and damage profile of Si(100) surface. The etching rate enhancement and damage profile have been explained using conventional TRIM analysis and ion beam induced surface damage.