Cubic MgZnO thin films on sapphire substrate: effect of deposition temperature

被引：1
|
作者：
Sonmez, Nihan Akin [1 ,2 ]
机构：
[1] Gazi Univ, Photon Applicat & Res Ctr, Ankara, Turkey
[2] Gazi Univ, Tech Sci VS, Dept Elect & Energy, Ankara, Turkey
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 04期
关键词：
OPTICAL-PROPERTIES; MGXZN1-XO FILMS; BAND-GAP; PHASE; GROWTH; INTERFACE;
D O I：
10.1007/s10854-019-00700-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural, morphological and optical properties of cubic MgZnO thin films deposited on sapphire substrates by radio frequency (RF) magnetron sputtering method at different deposition temperatures (RT, 500 degrees C and 800 degrees C) were investigated. The presence of Mg in deposited samples was confirmed through SIMS depth profile. Moreover, Mg content of the alloys was calculated using a quadratic approximation depending on band gap bowing parameter. The film deposited at 500 degrees C with band gap energy of 5.0eV has better crystallinity and atomic homogeneity than the others. Both film quality and Mg atomic distribution deteriorated at 800 degrees C due to thermal effect on the substrate surface. The results explore the applicability of RF-sputtered cubic MgZnO thin films as an active sensor area for deep UV-based optoelectronic applications.
引用
收藏
页码：4104 / 4110
页数：7
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