SEU-sensitive volumes in bulk and SOISRAMs from first-principles calculations and experiments

被引:149
|
作者
Dodd, PE [1 ]
Shaneyfelt, MR [1 ]
Horn, KM [1 ]
Walsh, DS [1 ]
Hash, GL [1 ]
Hill, TA [1 ]
Draper, BL [1 ]
Schwank, JR [1 ]
Sexton, FW [1 ]
Winokur, PS [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1109/23.983148
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Large-scale three-dimensional (3-D) device simulations, focused ion microscopy, and broadbeam heavy-ion experiments are used to determine and compare the SEU-sensitive volumes of bulk-Si and SOI CMOS SRAMs. Single-event upset maps and cross-section curves calculated directly from 3-D simulations show excellent agreement with broadbeam cross section curves and microbeam charge collection and upset images for 16 K bulk-Si SRAMs. Charge-collection and single-event upset (SEU) experiments on 64 K and 1 M SOI SRAMs indicate that drain strikes can cause single-event upsets in SOI ICs. 3-D simulations do not predict this result, which appears to be due to anomalous charge collection from the substrate through the buried oxide. This substrate charge-collection mechanism can considerably increase the SEU-sensitive volume of SOI SRAMs, and must be included in single-event models if they are to provide accurate predictions of SOI device response in radiation environments.
引用
收藏
页码:1893 / 1903
页数:11
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