A resistorless CMOS bandgap reference with low temperature coefficient and high PSRR

被引:4
|
作者
Zhou, Zekun [1 ]
Feng, Luping [1 ]
Ma, Yingqian [1 ]
Shi, Yue [2 ]
Ming, Xin [1 ]
Zhang, Bo [1 ]
机构
[1] Univ Elect Sci & Technol China, State key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China
关键词
CMOS bandgap reference without resistors; differential amplifier; self-biased current source; temperature coefficient; power supply rejection ratio; PRECISION;
D O I
10.1080/00207217.2012.669720
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel bandgap reference (BGR) with low temperature and supply voltage sensitivity without any resistor, which is compatible with standard CMOS process, is presented in this article. The proposed BGR utilises a differential amplifier with an offset voltage proportional to absolute temperature to compensate the temperature drift of emitter-base voltage. Besides, a self-biased current source with feedback is used to provide the bias current of the BGR core for reducing current mirror errors dependent on supply voltage and temperature further. Verification results of the proposed BGR implemented with 0.35 mu m CMOS process demonstrate that a temperature coefficient of 10.2 ppm/degrees C is realised with temperature ranging from -40 degrees C to 140 degrees C, and a power supply rejection ratio of 58 dB is achieved with a maximum supply current of 27 mu A. The active area of the presented BGR is 160 x 140 mu m(2).
引用
收藏
页码:1427 / 1438
页数:12
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