Design of Bandgap Voltage Reference with Low Temperature Drift and High PSRR

被引：0
|
作者：
Xie H. [1 ,2 ]
Wang Z. [1 ,2 ]
Zeng J. [3 ]
Lu J. [1 ,2 ]
Cao W. [1 ,2 ]
Chen Z. [1 ,2 ]
Cui K. [1 ,2 ]
机构：
[1] School of Physics and Electronics Science, Changsha University of Science and Technology, Changsha
[2] Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha
[3] School of Physics and Electronics, Hunan University, Changsha
来源：
Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences | 2021年 / 48卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Band gap; PSRR(power supply rejection ratio); Temperature coefficient; Temperature compensation;
D O I：
10.16339/j.cnki.hdxbzkb.2021.08.015
中图分类号：
学科分类号：
摘要：
The second-order temperature compensation was realized by weighted superposition of the first-order temperature compensation voltage and the voltage with high-order temperature term which was conversed from the subthreshold leakage current of MOS transistor. In addition, a high-gain operational amplifier and negative feedback loop were adopted to improve the power supply rejection ratio(PSRR). Subsequently, a bandgap voltage reference with low temperature drift and high power supply voltage rejection ratio was proposed. Based on 0.18 μm CMOS technology, circuit design and simulation, layout design, and post-simulation were carried out. The results indicated that the output voltage was 1.22 V under the power supply voltage of 1.8 V; the temperature coefficient(TC) was 3.3 ppm/℃ in the temperature range from -40 ℃ to 110 ℃; the PSRR at low frequency was -96 dB@100 Hz; the static current was only 33 μA. © 2021, Editorial Department of Journal of Hunan University. All right reserved.
引用
收藏
页码：119 / 124
页数：5
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