An ultra-low-power, temperature compensated voltage reference generator

被引:0
|
作者
De Vita, G [1 ]
Iannaccone, G [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56122 Pisa, Italy
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS voltage reference, based on the difference between the gate-source voltages of two NMOS transistors, has been realized with AMS 0.35 mu m CMOS technology (V(thn)=0.45 V and V(thn)=0.75 V at 0 degrees C). The minimum and maximum supply voltages are 1.5 V and 4.3 V, respectively. The supply current at the maximum supply voltage and at 80 degrees C is 2.4 mu A. A temperature coefficient of 25 ppm/degrees C and a line sensitivity of 1.6 mV/V are achieved. The power supply rejection ratios without any filtering capacitor at 100 Hz and 10 MHz are larger than -74 and -59 dB, respectively. The occupied chip area is 0.08 mm(2).
引用
收藏
页码:751 / 754
页数:4
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