Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes

被引：28

作者：

Long, Hao ^{[1
]}

Li, Songzhan ^{[1
,2
]}

Mo, Xiaoming ^{[1
]}

Wang, Haoning ^{[1
]}

Huang, Huihui ^{[1
]}

Chen, Zhao ^{[1
]}

Liu, Yuping ^{[1
]}

Fang, Guojia ^{[1
]}

机构：

[1] Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Dept Elect Sci & Technol, Sch Phys & Technol,Minist Educ China, Wuhan 430072, Hubei, Peoples R China

[2] Wuhan Text Univ, Sch Elect & Elect Engn, Wuhan 430073, Hubei, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 12期

基金：

中国国家自然科学基金;

关键词：

GAN; FABRICATION; ARRAYS;

D O I：

10.1063/1.4821346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light-emitting diodes (LEDs) with MgZnO/ZnO/MgZnO double heterojunction structure have been fabricated and the room temperature electroluminescence (EL) spectra have been studied. With the help of double heterostructure, LEDs show better visible EL performance than that of LED with ordinary p-i-n structure. By replacing ZnO film with ZnO nanorod arrays in this double heterostructure, strong ultraviolet EL emission around 380 nm was achieved. The ZnO-nanorod-based double heterostructured light-emitting diode exhibits superior stability with an intensity degradation of less than 3% over 8 h. The EL mechanisms were discussed in terms of carrier confinement and carrier transport based on semiconductor heterojunction theory. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 50 条

[41] Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode
Iwan, S.
Bambang, S.
Zhao, J. L.
Tan, S. T.
Fan, H. M.
Sun, L.
Zhang, S.
Ryu, H. H.
Sun, X. W.
PHYSICA B-CONDENSED MATTER, 2012, 407 (14) : 2721 - 2724
[42] Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes
Dai, Kehui
Soh, Chew Beng
Chua, Soo Jin
Wang, Lianshan
Huang, Dexiu
JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
[43] Tunability of UV electroluminescence for n-ZnO:Al/n−-ZnO/i-MgO/n-GaN heterostructured light-emitting diodes
S. Li
G. Fang
H. Huang
H. Long
H. Wang
X. Mo
B. Dong
X. Zhao
Applied Physics B, 2012, 107 : 497 - 502
[44] Comparison of models of electroluminescence in organic double-layer light-emitting diodes
Nikitenko, VR
Salata, OV
Bässler, H
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2359 - 2367
[45] Enhanced device lifetime of double-heterojunction nanorod light-emitting diodes
Cho, Seong-Yong
Oh, Nuri
Nam, Sooji
Jiang, Yiran
Shim, Moonsub
NANOSCALE, 2017, 9 (18) : 6103 - 6110
[46] Near white electroluminescence from self-supporting ZnO nanocone array based heterojunction light-emitting diodes
Wang, Haoning
Long, Hao
Mo, Xiaoming
Chen, Zhao
Li, Songzhan
Huang, Huihui
Liu, Yuping
Fang, Guojia
MATERIALS RESEARCH EXPRESS, 2015, 2 (03):
[47] Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate
Li, Bing-Hui
Yao, Bin
Li, Yong-Feng
Deng, Rui
Zhang, Zhen-Zhong
Liu, Wei-Wei
Shan, Chong-Xin
Zhang, Ji-Ying
Shen, De-Zhen
Faguang Xuebao/Chinese Journal of Luminescence, 2010, 31 (06): : 854 - 858
[48] Flexible paper-based ZnO nanorod light-emitting diodes induced multiplexed photoelectrochemical immunoassay
Zhang, Yan
Ge, Lei
Li, Meng
Yan, Mei
Ge, Shenguang
Yu, Jinghua
Song, Xianrang
Cao, Bingqiang
CHEMICAL COMMUNICATIONS, 2014, 50 (12) : 1417 - 1419
[49] Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes
Oh, Seongkeun
Kim, Jiwan
APPLIED SCIENCES-BASEL, 2019, 9 (21):
[50] Near-ultraviolet electroluminescence from ZnO-based light-emitting diodes with n-ZnO nanorod/p-GaN direct-bonding heterojunction structure
Chen, Cheng
Zhang, Jun
Chen, Jingwen
Wang, Shuai
Liang, Renli
Zhang, Wei
Dai, Jiangnan
Chen, Changqing
MATERIALS LETTERS, 2017, 189 : 144 - 147

← 1 2 3 4 5 →