Electronic passivation of 3C-SiC(001) via hydrogen treatment

被引：11
|
作者：
Coletti, C. [1 ]
Frewin, C. L. [1 ]
Hoff, A. M. [1 ]
Saddow, S. E. [1 ]
机构：
[1] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 10期
关键词：
D O I：
10.1149/1.2961590
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Electronic passivation of single-crystal, atomically flat (001) surfaces of cubic silicon carbide (3C-SiC) was attempted via hydrogen annealing and HF exposure and investigated by monitoring the surface potentials of the treated samples. It was found that HF treatment causes a negative charging of the surface and that only hydrogen annealing is effective in producing well-passivated 3C-SiC. The degree and stability of the surface electronic passivation was dependent on the final hydrogen cooling temperature of the annealing process. Surface charge densities of the hydrogen-treated surfaces were calculated from the measured surface potentials and were found to be in the 10(10) cm(-2) range.
引用
收藏
页码：H285 / H287
页数：3
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