Application of Silicon Carbide (SiC) Power Devices: Opportunities, Challenges and Potential Solutions

被引：0
|
作者：
Yuan, Xibo [1 ]
机构：
[1] Univ Bristol, Dept Elect & Elect Engn, Bristol, Avon, England
来源：
IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2017年
基金：
英国工程与自然科学研究理事会;
关键词：
Silicon carbide; wide-bandgap; power converters; high efficiency; dv/dt; high density;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dvldt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk effect through parasitic elements of the circuit. This paper will review the opportunities and challenges in the application of SiC devices and present several potential solutions aiming to fully exploit the supervisor characteristics of these devices while attenuating their side-effects.
引用
收藏
页码：893 / 900
页数：8
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