Temperature Distribution and Facet Coating Degradation Analysis of 808 nm GaAs-Based High-Power Laser Diode Bars

被引：0
|
作者：
Zhang, Siyu [1 ]
Feng, Shiwei [1 ]
An, Zhenfeng [2 ]
Yang, Hongwei [2 ]
Gong, Xueqin [3 ]
Qiao, Yanbin [4 ]
机构：
[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing, Peoples R China
[2] Hebei Semicond Inst, Dept Laser Diodes, Shijiazhuang, Hebei, Peoples R China
[3] Chinese Acad Sci, Inst Microelect, R&D Ctr Silicon Device & Integrates Technol, Beijing, Peoples R China
[4] Beijing Smart Chip Microelect Technol Co Ltd, State Grid Key Lab Power Chip Designing & Anal Te, Beijing, Peoples R China
来源：
2017 2ND IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM) | 2017年
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
semiconductor laser diode bars; reliability; facet coating; thermal infrared imaging; catastrophic optical damage;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation mechanism of 808 nm GaAs-based high-power laser diode bars (LDBs) which has 47 single laser diodes is investigated using infrared thermography, focused ion beam, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy techniques. We obtained the temperature distribution of the output facet and the results indicate that emitter 24, which is located at the center of the bar chip, exhibits the highest facet temperature, that is, 37.87 degrees C and 42.08 degrees C at operating currents of 20 A and 25 A, respectively. Thus, we made a sample of emitter 24 that was then studied in detail. The facet coating of this sample changed and degraded visibly in both constituent and thickness, which eventually resulted in the catastrophic optical damage (COD) of its output facet. We deduce that we can improve the performance and reliability of LDBs through optimizing their facet coatings.
引用
收藏
页码：110 / 114
页数：5
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