Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

被引：1
|
作者：
Ivukin, I. N. [1 ,2 ]
Artem'ev, D. M. [1 ,2 ]
Bugrov, V. E. [1 ,2 ]
Odnoblyudov, M. A. [1 ]
Romanov, A. E. [1 ,2 ,3 ]
机构：
[1] Optogan Grp, St Petersburg 198205, Russia
[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia
[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2012年 / 54卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
GAN;
D O I：
10.1134/S1063783412120165
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor K (I) has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated.
引用
收藏
页码：2421 / 2424
页数：4
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