Time-resolved photoluminescence studies of Mg-doped AIN epilayers

被引：0
|
作者：
Nepal, N. [1 ]
Nakarmi, M. L. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构：
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS X | 2006年 / 6118卷
关键词：
Mg-doped AIN; time-resolved PL; exciton; lifetime; carrier dynamics; ultrafast spectroscopy;
D O I：
10.1117/12.651856
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photolurninescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I-1) with a binding energy, E-bx of 40 meV. The recombination lifetime of the I-1 transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.
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页数：7
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