Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2

被引:44
|
作者
Ruffino, F. [1 ]
Grimaldi, M. G. [1 ]
Giannazzo, F. [2 ]
Roccaforte, F. [2 ]
Raineri, V. [2 ]
机构
[1] Univ Catania, MATIS, CNR, INFM,Dipartimento Fis & Astron, I-95123 Catania, Italy
[2] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy
来源
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 03期
关键词
Dynamic scaling behavior; Kinetic roughening; Atomic force microscopy; Gold; SiO2; X-RAY REFLECTIVITY; GROWTH; SURFACE; SILVER; ADSORPTION; CONTINUUM;
D O I
10.1007/s11671-008-9235-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2 using the atomic force microscopy technique. By the analyses of the dependence of the roughness, sigma, of the surface roughness power, P(f), and of the correlation length, xi, on the film thickness, h, the roughness exponent, alpha = 0.9 +/- A 0.1, the growth exponent, beta = 0.3 +/- A 0.1, and the dynamic scaling exponent, z = 3.0 +/- A 0.1 were independently obtained. These values suggest that the sputtering deposition of Au on SiO2 at room temperature belongs to a conservative growth process in which the Au grain boundary diffusion plays a dominant role.
引用
收藏
页码:262 / 268
页数:7
相关论文
共 50 条
  • [21] Atomic force microscopy study of surface roughening of sputter-deposited TiN thin films
    Liu, Z.-J., 1600, American Institute of Physics Inc. (92):
  • [22] Phase separation in SiO2–TiO2 gel and glassy films studied by atomic force microscopy and transmission electron microscopy
    A. Karthikeyan
    Rui M. Almeida
    Journal of Materials Research, 2001, 16 : 1626 - 1631
  • [23] Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2
    Olbrich, A
    Ebersberger, B
    Boit, C
    APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3114 - 3116
  • [25] Conductive atomic force microscopy studies of thin SiO2 layer degradation
    Fiorenza, P
    Polspoel, W
    Vandervorst, W
    APPLIED PHYSICS LETTERS, 2006, 88 (22)
  • [26] Behavior of local current leakage in stressed gate SiO2 films analyzed by conductive atomic force microscopy
    Seko, A
    Watanabe, Y
    Kondo, H
    Sakai, A
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7B): : 4683 - 4686
  • [27] Detection and characterization of stress-induced defects in gate SiO2 films by conductive atomic force microscopy
    Watanabe, Y
    Seko, A
    Kondo, H
    Sakai, A
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7B): : 4679 - 4682
  • [28] Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
    Raineri, V
    Lombardo, S
    Iacona, F
    LaVia, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 116 (1-4): : 482 - 485
  • [29] Simulation of atomic force microscopy of fractal nanostructured carbon films
    Bogana, M
    Donadio, D
    Benedek, G
    Colombo, L
    EUROPHYSICS LETTERS, 2001, 54 (01): : 72 - 76
  • [30] An atomic force microscope study of surface roughness of thin silicon films deposited on SiO2
    Nasrullah, J
    Tyler, GL
    Nishi, Y
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) : 303 - 311