Velocity overshoot in zincblende and wurtzite GaN

被引：21
|
作者：
Caetano, EWS
Costa, RN
Freire, VN
da Costa, JAP
机构：
[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil
[2] Univ Fed Rio Grande do Norte, Dept Fis Teor & Expt, BR-59072970 Natal, RN, Brazil
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 09期
关键词：
semiconductors; electronic transport;
D O I：
10.1016/S0038-1098(99)00114-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ultrafast transient behavior of the electron drift velocity and mean energy in zincblende and wurtzite GaN subjected to electric fields E < 100 kV/cm is studied. The evolution of the transport parameters towards the steady state is shown to occur in less than 0.3 ps in both GaN structures. The velocity transient presents an overshoot effect when E > 20 kV/cm and E > 50 kV/cm in the case of zincblende and wurtzite GaN, respectively, even without taking into account intervalley scattering. For a given electric field, the velocity overshoot is always much stronger in the zincblende phase than in the wurtzite phase. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：469 / 472
页数：4
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