Effects of hydrogen on diamond single crystal synthesized under high pressure and high temperature

被引：3

作者：

Li, Yong ^{[1
]}

Jia, Xiaopeng ^{[2
]}

Song, Mousheng ^{[1
]}

Ma, Hong-An ^{[2
]}

Zhou, Zhenxiang ^{[2
]}

Fang, Chao ^{[2
]}

Wang, Fangbiao ^{[2
]}

Chen, Ning ^{[2
]}

Wang, Ying ^{[1
]}

机构：

[1] Tongren Univ, Phys & Elect Sci Dept, Tongren 554300, Peoples R China

[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2015年 / 29卷 / 27期

基金：

中国国家自然科学基金;

关键词：

Diamond; impurity; high pressure and high temperature; properties; HPHT SYNTHESIS; POWDER CATALYST; CARBON; BORON; PASSIVATION; IMPURITIES; GROWTH; NAN3;

D O I：

10.1142/S0217984915501626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, diamond single crystals doped with LiH and boron additives were synthesized in Fe64Ni36-C system under high pressure and high temperature. Under the fixed pressure condition, we found that the synthesis temperature increased slightly after the addition of LiH in the synthesis system. The {100}-orientated surface morphology was investigated by scanning electron microscopy (SEM). The nitrogen concentration in the obtained diamond was analyzed and evaluated using Fourier transmission infrared spectroscopy (FTIR). Furthermore, the electrical properties of Ib-type and boron-doped diamond before and after hydrogenation using Hall effect measurement, which suggested that the conductivity of diamond co-doped with hydrogen and boron was obviously enhanced than that of boron-doped diamond.

引用

页数：9

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