Collisional broadening of semiconductor microcavity polaritons

被引:0
|
作者
Dunbar, LA [1 ]
Lynch, M
Bradley, AL
Donegan, JF
Hegarty, J
Stanley, RP
Oesterle, U
Houdré, R
Ilegems, M
机构
[1] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland
[2] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1002/1521-396X(200204)190:2<435::AID-PSSA435>3.0.CO;2-O
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We measure the effect of intensity on the homogeneous linewidth of two high finesse semiconductor microcavities in the strong coupling regime using degenerate four-wave mixing. We find that the collisional broadening due to polariton-polariton scattering shows a threshold behaviour with intensity. At low intensities, a strong suppression is seen due to the small density of states available. Above threshold, the number of accessible states dramatically increases, giving a large increase in the collisional broadening. We also investigate the effect of modifying the dispersion curve, by detuning, on the threshold behaviour.
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收藏
页码:435 / 440
页数:6
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