Transport and magnetic properties on MgB2 thin films

被引：0
|
作者：
Ilonca, G.
Beiuseanu, F.
Toma, V.
Jurcut, T.
Macocian, E. -V.
机构：
[1] Univ Babes Bolyai, Fac Phys, RO-400084 Cluj Napoca, Romania
[2] Univ Oradea, Fac Sci, Oradea, Romania
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2006年 / 8卷 / 03期
关键词：
MgB2 thin films; magnetotransport properties; hall effect; magnetization;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetotransport data on MgB2 thin films, fabricated on Al2O3 substrates using electron - bean deposition and Mg diffusion method are reported for applied magnetic field up to 9T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature were determined. The Hall coefficient is slightly temperature dependent and positive in normal state. Using the extracted data, the electronic mean free path, coherence length xi(0), anisotropic coefficient gamma and penetration depth. were calculated.
引用
收藏
页码：1152 / 1155
页数：4
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