Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

被引：6
|
作者：
He, Hongyu [1 ,2 ]
Xiong, Chao [3 ]
Yin, Junli [1 ]
Wang, Xinlin [1 ]
Lin, Xinnan [2 ]
Zhang, Shengdong [2 ]
机构：
[1] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China
[3] Changzhou Inst Technol, Sch Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Numerical models; Analytical models; Capacitance; Mathematical model; Temperature; Electron traps; Integrated circuit modeling; Capacitance model; drain current model; field-effect mobility; InGaZnO (IGZO); temperature characteristics; thin-film transistor (TFT); THIN-FILM TRANSISTORS; COMPACT MODEL; DEEP; TAIL; EXTRACTION; PARAMETERS; PHYSICS;
D O I：
10.1109/TED.2020.3009086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao-Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in the energy gap of the a-IGZO thin film. The numerical model is successful for the TFT in both the subthreshold regime and the above-threshold regime. In the subthreshold regime, considering that the trapped electron concentration in the deep trap states dominates the Poisson's equation, the surface-potential-based analytical model is presented. In the above-threshold regime, the threshold-voltage-based analytical model is presented. Applying the smooth function to connect the subthreshold model and the above-threshold model, the analytical compact model is obtained. The compact model is verified by the numerical Pao-Sah model and the available experimental data from 253 to 393 K. Furthermore, the temperature characteristics of the field-effect mobility are discussed.
引用
收藏
页码：3637 / 3644
页数：8
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