Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

被引：6
|
作者：
He, Hongyu [1 ,2 ]
Xiong, Chao [3 ]
Yin, Junli [1 ]
Wang, Xinlin [1 ]
Lin, Xinnan [2 ]
Zhang, Shengdong [2 ]
机构：
[1] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China
[3] Changzhou Inst Technol, Sch Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Numerical models; Analytical models; Capacitance; Mathematical model; Temperature; Electron traps; Integrated circuit modeling; Capacitance model; drain current model; field-effect mobility; InGaZnO (IGZO); temperature characteristics; thin-film transistor (TFT); THIN-FILM TRANSISTORS; COMPACT MODEL; DEEP; TAIL; EXTRACTION; PARAMETERS; PHYSICS;
D O I：
10.1109/TED.2020.3009086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao-Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in the energy gap of the a-IGZO thin film. The numerical model is successful for the TFT in both the subthreshold regime and the above-threshold regime. In the subthreshold regime, considering that the trapped electron concentration in the deep trap states dominates the Poisson's equation, the surface-potential-based analytical model is presented. In the above-threshold regime, the threshold-voltage-based analytical model is presented. Applying the smooth function to connect the subthreshold model and the above-threshold model, the analytical compact model is obtained. The compact model is verified by the numerical Pao-Sah model and the available experimental data from 253 to 393 K. Furthermore, the temperature characteristics of the field-effect mobility are discussed.
引用
收藏
页码：3637 / 3644
页数：8
相关论文
共 50 条
  • [1] A drain current model for amorphous InGaZnO thin film transistors considering temperature effects
    Cai, M. X.
    Yao, R. H.
    SOLID-STATE ELECTRONICS, 2018, 141 : 23 - 30
  • [2] A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics
    Sharma, Ashima
    Bahubalindruni, Pydi Ganga
    Bharti, Manisha
    Shrivastava, Suyash
    Talukder, Santanu
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (09) : 1475 - 1478
  • [3] Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction
    Ghittorelli, Matteo
    Torricelli, Fabrizio
    Kovacs-Vajna, Zsolt Miklos
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (12) : 1340 - 1343
  • [4] Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density
    Bae, Minkyung
    Kim, Yongsik
    Kong, Dongsik
    Jeong, Hyun Kwang
    Kim, Woojoon
    Kim, Jaehyeong
    Hur, Inseok
    Kim, Dong Myong
    Kim, Dae Hwan
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1546 - 1548
  • [5] Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
    Tsormpatzoglou, A.
    Hastas, N. A.
    Choi, N.
    Mahmoudabadi, F.
    Hatalis, M. K.
    Dimitriadis, C. A.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
  • [6] Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
    He, Hongyu
    Liu, Yuan
    Yan, Binghui
    Lin, Xinnan
    Zheng, Xueren
    Zhang, Shengdong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3654 - 3660
  • [7] ANALYTICAL DRAIN CURRENT MODEL FOR A-SI-H TFTS BY SIMULTANEOUSLY CONSIDERING LOCALIZED DEEP AND TAIL STATES
    KUO, JB
    CHEN, CS
    ELECTRONICS LETTERS, 1993, 29 (17) : 1566 - 1568
  • [8] Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress
    Kim, Jong In
    Cho, In-Tak
    Joe, Sung-Min
    Jeong, Chan-Yong
    Lee, Daeun
    Kwon, Hyuck-In
    Jin, Sung Hun
    Lee, Jong-Ho
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (04) : 458 - 460
  • [9] A Unified Drain Current Model for Poly-Si and a-InGaZnO TFTs under Different Temperatures
    Han, Zhiyuan
    Wang, Mingxing
    Wu, Yong
    Zhou, Haiqin
    He, Jin
    PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015), 2015, : 80 - 83
  • [10] Physical-Based Analytical Model of Amorphous InGaZnO TFTs Including Deep, Tail, and Free States
    Ghittorelli, Matteo
    Kovacs-Vajna, Zsolt Miklos
    Torricelli, Fabrizio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) : 4510 - 4517
12345