Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer

被引：39
|
作者：
Sheu, JK [1 ]
Chi, GC
Jou, MJ
机构：
[1] Natl Cent Univ, Ctr Opt Sci, Chungli 32054, Taiwan
[2] Epistar Corp, Hsinchu 300, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 11期
关键词：
GaN; InGaN; light-emitting diode; metal-organic vapor-phase epitax; multiple quantum well;
D O I：
10.1109/68.959351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaN-GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) with InGaN current-spreading layer were grown by metal-organic vapor-phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I - V), as well as output power measurements. Experimental results indicate that the LEDs exhibited a higher output power and a lower operation voltage than that of conventional LEDs. The external quantum efficiency of InGaN-GaN MQW LEDs for bare chips operated at injection current of 20 mA with InGaN current spreading layer near 5%. This is two times higher than that of conventional LEDs. This could be tentatively attributed to the better current-spreading effect resulting from Si-doped In0.18Ga0.82N-wide potential well in which electron states are not quantized.
引用
收藏
页码：1164 / 1166
页数：3
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