X-ray Absorption Fine Structure of ZnO Thin Film on Si and Sapphire Grown by MOCVD

被引：0

作者：

Xin, Jieping ^{[1
]}

Chang, Chieh Miao ^{[2
]}

Hsueh, Chih-han ^{[2
]}

Lee, Jyh-Fu ^{[3
]}

Chen, Jin-Ming ^{[3
]}

Lin, Hao-Hsiung ^{[2
]}

Lu, Na ^{[4
]}

Ferguson, Ian T. ^{[5
]}

Guan, Yongjing ^{[1
]}

Wan, Lingyu ^{[1
]}

Yang, Qingyi ^{[1
]}

Feng, Zhe Chuan ^{[1
]}

机构：

[1] Guangxi Univ, Coll Phys Sci Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China

[2] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[4] Purdue Univ, Lyles Sch Civil Engn, Indiana, PA USA

[5] Missouri Univ Sci & Technol, Coll Engn Comp, Rolla, MO 65409 USA

来源：

2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2016年

关键词：

ZnO; substrate; XANES; EXAFS; MOCVD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.

引用

页数：2

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